High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
نویسندگان
چکیده
منابع مشابه
Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric
Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of pr...
متن کاملPerformance of Thin Film Transistor: A Review
Transparent electronics becomes one of the most advanced topics for wide range of device applications. The key components are wide band gap semiconductors, where oxides of different origins play an important role as passive component and also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during ...
متن کاملRemarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power o...
متن کاملGate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.
Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the sel...
متن کاملPerformance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body
Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, with the capacitive-coupling arisen from the DG structure. In order to advance this platform, we h...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanomaterials
سال: 2020
ISSN: 2079-4991
DOI: 10.3390/nano10112145